Characterization of the Cyclostationary Emissions in the Near-Field of Electronic Device

Abstract

In this paper a methodology for the characterization of cyclostationary sources based on near-field time-domain measurements is proposed. The theory of the near-field scanning measurements over the equivalent Huygens' surface in parallel to the object plane of the PCB is presented. The theoretical background for the properties and characterization of the cyclostationary random processes is given. The space-time distributions of the cyclostationary sources over the equivalent Huygens surface of Intel Galileo Board is experimentally determined.