Ultra Low Noise Amplifier in SiGe:C Technology for 802.11a, b and g WLAN Applications

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282767

H. Forstner, A. Dehé, B. Eisener, K. Ettinger, U. Gerlach, A. Jentzsch, W. Klein, C. Lehrer

引用次数: 2

Abstract

A dual band low noise and low cost wireless LAN amplifier has been fully integrated in a commercial SiGe:C bipolar technology using a highly doped silicon substrate. Outstanding low noise figures of 0.9dB at 2.4GHz and 1.45dB at 6GHz have been measured. Current consumption is 11mA in the low band and 17 mA in the high band, out off a voltage supply of 3.2V, and stabilized by a bandgap voltage reference. Low band gain is 13.5dB with an IP-1dB of -7dBm and IIP3 of +4dBm. High band gain is 20dB with an IP-1dB of -9dBm and IIP3 of +3dBm

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用于802.11a, b和g WLAN应用的SiGe:C技术超低噪声放大器

一个双频低噪声和低成本的无线局域网放大器已经完全集成在商用SiGe:C双极技术使用高掺杂硅衬底。在2.4GHz和6GHz的低噪声数据分别为0.9dB和1.45dB。低频段的电流消耗为11mA，高频段为17ma，由3.2V的电压源输出，并通过带隙参考电压稳定。低频段增益为13.5dB, IP-1dB为-7dBm, IIP3为+4dBm。高频段增益为20dB, IP-1dB为-9dBm, IIP3为+3dBm

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 European Microwave Integrated Circuits Conference

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