Ultra-fme Si photonics fabrication technology based on 40-nm-node CMOS process

Abstract

The dimension control technology for silicon photonics devices based on 40-nm-node CMOS technology are reviewed. By using ArF immersion lithography in the fabrication technology, the high-level reproducihility in resonant wavelength of demultiplexers (σλ. <;1 nm) was achieved, as well as extremely low propagation loss <;0.5 dB/cm in silicon wire waveguide for TE single mode propagation in C-band.