DC, RF and Noise Characterization of AlGaN/GaN HEMT

Abstract

In this work, DC and RF characterization of AlGaN/GaN HEMT on SiC substrate was carried out. It was found that the maximum drain on current (ION) was 0.12 A/mm at a drain to source (VDS) bias of 9 V and at the gate to source bias (VGS) of 2 V. The maximum transconductance (gm) of the device was calculated to be 0.02 S. S21 parameter of the device was measured from 100 MHz to 50 GHz. The measurement of S parameters was done by the variation of VGS and VDS. The Noise Figure measurements of the device were done by varying the frequency from 2 GHz to 10 GHz using a Noise Figure Analyzer.