High Current, High DI/DT Switching With Optimised GTO Thyristors

J. Bonthond, L. Ducimetière, G. Schroder, E. Vossenberg, M. Evans, F. Wakeman, R. Youdan
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引用次数: 12

Abstract

The interdigitated gate structure of optimised high power GTO thyristors (Fast High Current Thyristors, FHCT’s) allows switching tens of kiloamps with a very high rate of current rise from blocking voltages of several kilovolts. Such high di/dt capabilities have up to now been restricted to gas switches. FHCT’s are making headway in fields of application which had traditionally been reserved for gas tubes. Solid state devices as these are for certain applications preferable to gas switches because they operate with higher efficiencies and have longer lifetimes. Besides that they do not need high voltage holding conditioning, cannot conduct erratically and are not subjected to electrode erosion. Normal GTO thyristors are optimised for their gate tum-off characteristics. This is achieved by three methods, heavy metal doping, diffused anode-shorts and irradiation. All these processes, in particular irradiation tend to slow down the turn-on characteristics of the device. However recent tests on a symmetrical 4.5kV, 66 mm unshorted anode FHCT, manufactured with light gold doping, show that the device can be used as a closing switch with excellent turn-on characteristics. Our tests have originally resulted in a dildt of 16 Wps for a half-sine wave current pulse of 32 kA amplitude. Recent tests achieved a di/dt of 2 0 W p s with a current pulse amplitude of 70 kA at an off-state blocking voltage of 1.6 kV. The tum-off capabilities of these devices are practically reduced to zero. One important operation condition is a fast and powerful gate drive. The gate controlled tum-on delay time is about 60011s. The measurements show that tum-on losses and conduction losses are only a few Joules. At this moment the construction of a switch consisting of ten in series connected 4.5 kV FHCT devices is being prepared. The effect of possible turn-on delay differences as well as the over-voltage protection circuit are discussed. If successful, the switch is an interesting alternative to the gas switches for the beam dumping kicker systems [ I ] of the Large Hadron Collider, where a 35 kV, 30 kA, 3 ps risetime switch is required.
高电流,高DI/DT开关与优化的GTO晶闸管
优化的高功率GTO晶闸管(快速高电流晶闸管,FHCT)的交叉栅极结构允许从几千伏的阻断电压以非常高的电流上升率开关数十千安培。到目前为止,这种高di/dt能力仅限于气体开关。FHCT在传统上仅用于气管的应用领域取得了进展。这些固态器件在某些应用中比气体开关更可取,因为它们的工作效率更高,使用寿命更长。此外,它们不需要高压保持条件,不能不规律地导电,也不会受到电极侵蚀。普通GTO晶闸管的栅极关断特性得到了优化。这是通过重金属掺杂、扩散阳极短路和辐照三种方法实现的。所有这些过程,特别是辐照往往会减慢器件的开启特性。然而,最近对用轻金掺杂制造的对称4.5kV, 66 mm无短路阳极FHCT的测试表明,该器件可以用作具有优异导通特性的闭合开关。我们的测试最初的结果是32 kA振幅的半正弦波电流脉冲的dildt为16 Wps。最近的测试在1.6 kV的断态阻断电压下实现了di/dt为20 wps,电流脉冲幅值为70 kA。这些设备的关断能力实际上已降至零。一个重要的操作条件是快速和强大的栅极驱动。门控导通延时时间约为60011s。测量结果表明,导通损耗和导通损耗仅为几焦耳。目前正在准备由10个串联的4.5 kV FHCT器件组成的开关结构。讨论了可能的导通延时差异以及过压保护电路的影响。如果成功,该开关将成为大型强子对撞机的光束倾倒启动系统[I]中气体开关的有趣替代方案,该系统需要35kv, 30ka, 3ps上升时间开关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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