Improvement of porous silicon EL efficiency during anodic oxidation and the application of a new microstructure analysis method

Abstract

The relation between light emitting characteristics and the porous silicon microstructure has been analyzed by applying a new in situ electroluminescence and photoluminescence spectra measurement technique during anodic oxidation. On the basis of this result, a porous silicon structure has been modified to improve /spl nu/ (the external light emission efficiency), and a maximum /spl nu/ of 0.35%, the highest confirmed value ever reported, has been obtained.