Safe Operation Area Of Trench-Gate And Low-Charge Power MOSFET

2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2018-09-01 DOI:10.1109/RADECS45761.2018.9328679

G. Davydov, D. Boychenko, Daria V. Pechenkina, A. Tararaksin, T. Kritskaya, A. Polokhov

引用次数: 1

Abstract

The SEB test results of 3 kinds and 17 types of power MOSFET were systemized in this work. Several common features of radiation behavior were found for tested devices. The approach to increase SEB sustainability area of MOSFET-based electronic devices was discussed.

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沟栅和低电荷功率MOSFET的安全工作区域

本文对3种17种功率MOSFET的SEB测试结果进行了系统整理。发现了被测器件辐射行为的几个共同特征。讨论了提高基于mosfet的电子器件SEB可持续性的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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