Mobility extraction for 24-nm-channel length n-MOS using the RFCV technique: Effect of the fabrication process

Abstract

In this article, we study the mobility for short devices (down to 24-nm-channel length) using the RFCV technique. We also evaluate how this technique is reliable for such small devices and discuss the consequences of extrinsic process effects like the HALO on the mobility degradation. Using the additional mobility, we deduce that this degradation occurs due to an increase in the doping concentration caused by the HALO technique, which also affects the screening effect at low effective field.