Analysis of Capacitance Behavior for Short-Channel Accumulation-Mode SOI PMOS Devices

Abstract

This paper reports the capacitance behavior of short-channel accumulation­ mode Sal PMOS devices. Based. on the study, compared to the inversion­ mode device, t!l,e accumulation-mode Sal PMOS device has a gradual tran­ sition in GGS from subthreshold to accumulation due to the effect of the buried channel.