Sol-gel processed Mg-doped In2O3 thin-film transistors

Abstract

We have shown that the magnesium doping effect causes indium oxide with a high negative threshold voltage, close to zero bias, to operate in the enhancement mode, with minimal mobility degradation. At 0.2wt%, the MIO film had a mobility of 11.96 cm2/Vs-s and a threshold voltage of-4 V, having shifted from −18 V.