{"title":"Next generation of adhesion enhancement system for high speed substrate manufacturing","authors":"T. Thomas, P. Brooks, F. Michalik, W. Cho","doi":"10.1109/ECTC32696.2021.00042","DOIUrl":null,"url":null,"abstract":"Improving adhesion between copper and lamination resin is one of the biggest challenges in micro-electronic manufacturing, such as IC substrate. Bonding enhancement process by surface roughening is predominant use method, due to providing the highest possible mechanical interlocking. In this process typically $\\mathrm{1}-\\mathrm{2}\\ \\mu\\mathrm{m}$ of copper need to be removed for reliable adhesion of dielectrics to the copper surface. Follow rapid development of electronics industry, where fine $\\mathrm{L}/\\mathrm{S}\\, (< \\mathrm{10}\\ \\mu\\mathrm{m})$ and good signal propagation at higher speed are required. The conventional approach to ensure good adhesion of the conductor to the dielectrics by increasing surface roughness to achieve adhesion is no longer applicable. This work demonstrates the development of a novel surface treatment method of copper which can meet all the challenges of IC substate manufacturing for high speed function. The developed surface treatment system adopted subsequent treatment of organic coating so called “adhesion promoter (AP)” on top of copper surface to provide the strongest possible bond strength via chemical adhesion. As a result, significant improvement of adhesion of conductor to dielectrics can be obtained at ultra-low copper surface roughness.","PeriodicalId":351817,"journal":{"name":"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC32696.2021.00042","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Improving adhesion between copper and lamination resin is one of the biggest challenges in micro-electronic manufacturing, such as IC substrate. Bonding enhancement process by surface roughening is predominant use method, due to providing the highest possible mechanical interlocking. In this process typically $\mathrm{1}-\mathrm{2}\ \mu\mathrm{m}$ of copper need to be removed for reliable adhesion of dielectrics to the copper surface. Follow rapid development of electronics industry, where fine $\mathrm{L}/\mathrm{S}\, (< \mathrm{10}\ \mu\mathrm{m})$ and good signal propagation at higher speed are required. The conventional approach to ensure good adhesion of the conductor to the dielectrics by increasing surface roughness to achieve adhesion is no longer applicable. This work demonstrates the development of a novel surface treatment method of copper which can meet all the challenges of IC substate manufacturing for high speed function. The developed surface treatment system adopted subsequent treatment of organic coating so called “adhesion promoter (AP)” on top of copper surface to provide the strongest possible bond strength via chemical adhesion. As a result, significant improvement of adhesion of conductor to dielectrics can be obtained at ultra-low copper surface roughness.