Thermal resistance measurements and reliability of GaAs power MESFETs

InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88 Pub Date : 1988-05-11 DOI:10.1109/ITHERM.1988.28673

G. Titinet, G. Manzone

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引用次数: 1

Abstract

Summary form only given. Thermal resistance measurements have been carried out on more than 50 devices with an in-house developed instrument, using the well-known electrical method based on temperature dependence of the Schottky junction forward voltage. The selected MESFETs, intentionally chosen with completely different layout and heat-sinking solutions, such as via-hole or air-bridge source contacts and flip-chip or backside mounting, have been measured at several temperatures and power levels. Present experimental results have been related to the different device structures available and have been compared with theoretical values coming from simplified models proposed in the literature. The results show that the exact location of heat-source areas and the description of heat transfer processes cannot be easily handled with a simple model without a considerable loss of accuracy. The quality of die-attach also has a relevant influence on the value of thermal resistance, essentially due to the presence of voids in the die-attach alloy.<>

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GaAs功率mesfet的热阻测量和可靠性

只提供摘要形式。热阻测量已经在50多个设备上进行了内部开发的仪器，使用基于肖特基结正向电压的温度依赖性的著名电气方法。所选择的mesfet具有完全不同的布局和散热解决方案，例如过孔或空气桥源触点以及倒装芯片或背面安装，已经在几种温度和功率水平下进行了测量。目前的实验结果与不同的器件结构有关，并与文献中提出的简化模型的理论值进行了比较。结果表明，用一个简单的模型很难准确地确定热源区域的位置和描述传热过程，而不会造成相当大的精度损失。模贴的质量也对热阻值有相关的影响，这主要是由于模贴合金中存在空隙。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88

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