Post-arc Transient Characteristics for DC Vacuum Circuit Breaker With Diode Connected in Series

Zhendong Peng, Bo Li, Xinle Sha, Chenguang Yang, Zhigang Ren
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引用次数: 1

Abstract

Experimental investigations have been carried out on the rapid high current commutation interruption (CI) process of a $10\mathrm{k}\mathrm{V}$ DC vacuum circuit breaker (VCB). The VCB arc restriking and breaking failure phenomenon appeared frequently in $23\mathrm{k}\mathrm{A}$ CI tests with arc current fall rate of about $300\mathrm{A}/\mu \mathrm{s}$ for a single VCB, while the VCB CI reliability has been improved a lot under the same conditions with diode connected in series. After a detailed analysis of the vacuum gap (VG) post-arc transient characteristics, it was found that it lasted about $450\mu \mathrm{s}$ before the VG finishing the ion sheath development for the single VCB in the post-arc stage. Meanwhile, the VG electric field intensity (EFI) and power density (PD) would quickly rise to the peak values of $12\mathrm{M}\mathrm{V}/\mathrm{m}$ and $45\mathrm{M}\mathrm{W}/\mathrm{m}^{2}$ separately in about $1\mu \mathrm{s}$ after the arc zero-crossing. As a result, the VG electrical or thermal breakdown were very prone to come out when the plasma concentration was still high in the sheath development stage. With the diode in series, the VG power injection path was cut off effectively by the diode reverse blocking, the initial transient recovery voltage rising very fast would be avoid and the plasma concentration was promoted to decay significantly, by which both the EFI and PD were decreased greatly when the VG began to get insulation recovery in the post-arc phase. Under the most extreme condition that the VG started to build dielectric strength at the end of the diode reverse blocking, the simulation results revealed the EFI and PD peak values were substantially reduced to $130\mathrm{k}\mathrm{V}/\mathrm{m}$ and $1.4\mathrm{k}\mathrm{W}/\mathrm{m}^{2}$ respectively and delayed for about $30\mu \mathrm{s}$, which were very beneficial to reduce the VG breakdown probability and improve the dielectric recovery performance in the post-arc transient.
二极管串联直流真空断路器弧后瞬态特性研究
对10\ mathm {k}\ mathm {V}$直流真空断路器(VCB)的快速大电流换流断流过程进行了实验研究。断路器电弧的电弧重燃,打破失败现象经常出现在23美元\ mathrm {k} \ mathrm {} $ CI测试电弧电流下降率约300美元\ mathrm{} / \μ\ mathrm{年代}$一个断路器,当断路器CI可靠性已经改进了很多在相同条件下与二极管串联连接。通过对真空间隙弧后瞬态特性的详细分析,发现在真空间隙弧后阶段完成单个真空间隙的离子鞘发育前,真空间隙持续了约450\mu \mathrm{s}$。同时,电弧过零后,VG电场强度(EFI)和功率密度(PD)分别在$1\mu \mathrm{s}$约$12\mathrm{M}\mathrm{V}/\mathrm{M} $和$45\mathrm{M}\ W}/\mathrm{M} ^{2}$迅速上升至峰值。因此,在鞘发育阶段,当血浆浓度仍然很高时,很容易出现VG电击穿或热击穿。当二极管串联时,二极管的反向阻断有效地切断了VG的功率注入路径,避免了初始瞬态恢复电压的快速上升,促进了等离子体浓度的显著衰减,从而使VG在弧后阶段开始获得绝缘恢复时,EFI和PD都大大降低。在最极端的情况下,即在二极管反向阻断结束时,VG开始建立介电强度,仿真结果表明,EFI和PD峰值分别大幅降低至$130\mathrm{k}\mathrm{V}/\mathrm{m}$和$1.4\mathrm{k}\mathrm{W}/\mathrm{m}^{2}$,延迟约$30\mu \mathrm{s}$,这对降低VG击穿概率和提高电弧后瞬态的介电恢复性能非常有利。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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