Analyzing Carbon Nanotube interconnects in VLSI application

Abstract

Single Wall Carbon Nanotubes exhibit outstanding contributions in the recent VLSI interconnections. Interconnects analyzed in VLSI circuits depends on the electrical properties of carbon nanotubes. Metallic carbon nanotubes are very distinct for their ballistic conductivity in nano level interconnections. Different peaks are analyzed in Raman spectroscopy technique for characterizing metallic carbon nanotubes. The performance analysis of metallic carbon nanotubes is compared with the conventional Cu interconnects. In this study we analyzed resistivity and capacitance of carbon nanotubes interconnects which indicates carbon nanotubes interconnect are the most prominent solution for the future VLSI technologies.