Single Event Effect Characterization of the GR740 Rad-Hard Quad-Core LEON4FT System-on-Chip

L. Tambara, Francisco Hernandez, F. Sturesson, Magnus Hjorth, J. Andersson, R. Weigand
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引用次数: 17

Abstract

The GR740, developed by Cobham Gaisler, is a radiation-hardened System-on-Chip that features a quad-core fault-tolerant LEON4 processor. The GR740 has been designated as the European Space Agency's “Next Generation Microprocessor.” The GR740 is implemented in the 65nm CMOS technology platform for space applications developed by STMicroelectronics. This work presents the Single Event Effect characterization of the GR740 flight silicon. The low rate of functional errors recorded in application-level testing under irradiation demonstrates the effectiveness of the radiation-hardening scheme selected for this device. Although an extensive number of radiation-induced events in the internal memory cells were recorded, all events were successfully mitigated and corrected. No evidence of error build-up was observed in the GR740.
GR740 Rad-Hard四核LEON4FT片上系统的单事件效应表征
由Cobham Gaisler开发的GR740是一种抗辐射的片上系统,具有四核容错LEON4处理器。GR740已被指定为欧洲航天局的“下一代微处理器”。GR740采用意法半导体(STMicroelectronics)为空间应用开发的65nm CMOS技术平台。本文介绍了GR740飞行硅的单事件效应表征。在辐照下的应用级测试中记录的低功能错误率证明了为该装置选择的辐射硬化方案的有效性。虽然在内部记忆细胞中记录了大量的辐射诱发事件,但所有事件都被成功地缓解和纠正了。在GR740中没有观察到误差累积的证据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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