{"title":"Model for a semiconductor quantum-dot nanolaser","authors":"W. Chow, F. Jahnke, C. Gies","doi":"10.1109/NUSOD.2014.6935328","DOIUrl":null,"url":null,"abstract":"A quantum-electrodynamics model is developed for a nanolaser with a semiconductor quantum-dot gain region. Intensity, coherence time and photon autocorrelation function are calculated, especially during transition from below to above lasing threshold.","PeriodicalId":114800,"journal":{"name":"Numerical Simulation of Optoelectronic Devices, 2014","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Numerical Simulation of Optoelectronic Devices, 2014","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2014.6935328","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A quantum-electrodynamics model is developed for a nanolaser with a semiconductor quantum-dot gain region. Intensity, coherence time and photon autocorrelation function are calculated, especially during transition from below to above lasing threshold.