Steplike growth of monolayer terraces in GaInAs quantum wells grown by selective epitaxy

Abstract

Using spatially and spectrally resolved low-temperature cathodoluminescence, we have investigated GaInAs/InP quantum wells grown by selective epitaxy. For quantum wells with a nominal thickness of 0.6 nm we observe a splitting of the luminescence into several lines due to the presence of fluctuations in the quantum well thickness. On 1.75/spl times/1.75 mm/sup 2/ sized patterns we observe large monolayer flat terraces up to a size of 90 /spl mu/m.<>