C. Besancon, N. Vaissière, D. Néel, H. Mehdi, G. Lefévre, V. Muffato, L. Sanchez, F. Fournel, C. Dupré, F. Bassani, J. Decobert
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Abstract
We present a selectively grown AlGaInAs Multi-Quantum Well laser array on silicon covering a 155 nm range over the C+L band achieved by InP seed bonding and MOVPE Selective Area Growth.
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