Self-Organizing Process Of Moderately Strained Zn/sub 1-x/CdxSe Layer Grown On GaAs

Abstract

Fabrication of semiconductor nanostructures such as quantum wires and quantum dots is very important for realization of new functional quantum devices. Among the various methods, a self-organization technique using the Stranski-Krastanow (S-K) growth mode in strained system has received great interest because high quality nano-scaled islands can be easily formed by epitaxial growth without any minute lithographic processes. However, since the spatial distributions of these islands are random, it is difficult to obtain a precise control of characteristics of the device. Several groups have attempted to control the islands to be linearly ordered. However, only irregular short-range arrays (less than 1 pm) were obtained [1,2].