Simulation of avalanche injection filamentation in MOSFET's and IGBT's

Abstract

On the basis of 2-D numerical simulation the isothermal current instability and filamentation have been investigated in the MOSFET’s and IGBT’s. It is stated that exceeding of some critical voltage value and current density in these devices provides negative differential resistance (NDR) due to the avalanche injection conductivity modulation and current filamentation of the source-drain (emitter-collector) spacing.