FET properties of single-walled carbon nanotubes individually assembled utilizing single strand DNA

Abstract

This paper reports a new assembly process for isolated single-walled carbon nanotubes (SWCNTs) on MEMS structures utilizing single strand DNA (ssDNA) and the electrical properties of SWCNT field effect transistors (FETs). Mono-dispersed SWCNT solution was prepared by wrapping biotin modified ssDNA around SWCNT and the SWCNTs were assembled onto gold electrodes using biotin-avidin bindings. The isolated SWCNT bridges between electrode gaps of 100 to 300 nm wide were successfully demonstrated. To improve electrical contacts, electroless gold deposition was employed. The Id-Vg curves in back-gate FET configurations showed either metallic or semiconducting properties and we confirmed that the isolated SWCNTs were individually assembled between the electrodes.