A 184.6-dBc/Hz FoM 100-kHz Flicker Phase Noise Corner 30-GHz Rotary Traveling-Wave Oscillator Using Distributed Stubs in 22-nm FD-SOI

M. Shehata, M. Keaveney, R. Staszewski
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引用次数: 3

Abstract

A rotary traveling-wave oscillator (RTWO) has an ability to generate multiple phases at millimeter-wave (mmW) frequencies while achieving low phase noise (PN). Unfortunately, due to transmission line (TL) dispersion, RTWOs suffer from flicker noise upconversion. In this letter, we propose a "distributed stubs" technique to mitigate this mechanism. To cancel out phase shifts due to the TL dispersion, we intentionally generate a phase difference between TL modes. The proposed 26.2–30 GHz RTWO is implemented in 22-nm FD-SOI CMOS. At 30 GHz, it achieves PN of − 107 and −128.1 dBc/Hz at 1 and MHz 10 offsets, respectively. This translates into figure-of-merits (FoM) of 183.5 and 184.6 dBc/Hz, respectively. The proposed architecture consumes 20 mW from 0.8-V supply. It achieves a flicker noise corner of 100 kHz, which is an order-of-magnitude better than currently achievable by state-of-the-art mmW RTWOs.
184.6 dbc /Hz FoM 100 khz闪烁相位噪声角30 ghz旋转行波振荡器,采用22nm FD-SOI的分布式存根
旋转行波振荡器(RTWO)能够在毫米波(mmW)频率下产生多相,同时实现低相位噪声(PN)。不幸的是,由于传输线(TL)色散,rtwo受到闪烁噪声上转换的影响。在这封信中,我们提出了一种“分布式存根”技术来缓解这种机制。为了消除由于TL色散引起的相移,我们有意在TL模式之间产生相位差。所提出的26.2-30 GHz RTWO在22nm FD-SOI CMOS中实现。在30ghz时,它在1和MHz 10偏移时的PN分别为- 107和- 128.1 dBc/Hz。这分别转化为183.5和184.6 dBc/Hz的优点系数(FoM)。所提出的架构从0.8 v电源消耗20兆瓦。它实现了100千赫的闪烁噪声角,这比目前最先进的毫米波rtwo实现的要好一个数量级。
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