Simple Radiated Noise Estimation Based on Datasets of SiC and Si IPMs for Inverter Use

T. Tadakuma, M. Rogers, M. Joko
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引用次数: 0

Abstract

For the sake of rapid prototyping and product development, it is desirable to comprehend radiated noise characteristics of SiC and Si devices at the earliest steps of designing new inverter systems because end products are subject to electromagnetic noise regulations. However, there is no international standard for evaluating radiated noise directly, not only for single chips, but also 6in1 Intelligent Power Modules (IPMs). This paper introduces a method to estimate radiated noise current dependency based on the radiated noise datasets of SiC and Si IPMs obtained by applying an extended double pulse test. The estimation method is then compared to the results of an actual operating inverter for validation.
基于逆变用SiC和Si ipm数据集的简单辐射噪声估计
为了快速成型和产品开发,在设计新的逆变器系统的早期阶段,了解SiC和Si器件的辐射噪声特性是必要的,因为最终产品受到电磁噪声法规的约束。然而,目前还没有直接评估辐射噪声的国际标准,不仅适用于单个芯片,也适用于6in1智能电源模块(ipm)。本文介绍了一种基于扩展双脉冲试验获得的SiC和Si ipm辐射噪声数据集估计辐射噪声电流依赖关系的方法。然后将估计方法与实际运行的逆变器的结果进行比较以验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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