AlInGaN/GaN heterostructures with 2D electron gas and quantum wells for transistors and light emitting diodes

2008 18th International Crimean Conference - Microwave & Telecommunication Technology Pub Date : 2008-11-18 DOI:10.1109/CRMICO.2008.4676513

G. P. Yablonskii, E. Lutsenko, H. Kalish, M. Heuken

引用次数: 1

Abstract

AlInGaN/GaN heterostructures with 2D electron gas and quantum wells were grown on Si substrates. Optical and electrical properties of the heterostructure were investigated; high electron mobility transistors (HEMT) and light emitting diodes (LED) were fabricated.

查看原文本刊更多论文

用于晶体管和发光二极管的具有二维电子气体和量子阱的AlInGaN/GaN异质结构

在Si衬底上生长了具有二维电子气和量子阱的AlInGaN/GaN异质结构。研究了异质结构的光学和电学性质;制备了高电子迁移率晶体管(HEMT)和发光二极管(LED)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2008 18th International Crimean Conference - Microwave & Telecommunication Technology

自引率

0.00%

发文量