Investigation of Nanostructured Matrices of Porous Semiconductors Modified by Zno/Ag Nanoparticles

Abstract

Purpose. In this work, we investigated the possibility of modifying porous silicon with silver and ZnO nanoparticles. For the synthesis of substrates was used the method of electrochemical etching in hydrofluoric acid solutions. According to SEM data, it was established that the pore size is d = 50-100 nm, the layer thickness is 25 μm. By means of EMP analysis, a composition of porous nanostructures has been investigated, confirming the presence of ZnO nanoparticles with size of 1 µm on its surface. As a result of research work demonstrated the effectiveness of the electro-thermal methods for introducing nanoparticles into the porous silicon matrix.