Optically-pumped all-epitaxial wafer-fused 1.52-/spl mu/m vertical-cavity lasers

Abstract

We demonstrate for the first time the operation of all-epitaxial vertical cavity lasers operating at 1.52 /spl mu/m using optical pumping. The laser cavity is formed by bonding an MOCVD-grown InGaAsP/InP mirror to an MBE-grown AlAs/GaAs mirror using the wafer fusion technique. The active region is a bulk 1.55 /spl mu/m InGaAsP layer of thickness 2/spl lambda/. Multiple transverse mode laser operation with equidistant mode separations of 1 nm was observed. The laser structure operated at heat sink temperatures as high as 35/spl deg/C.<>