Comprehensive Analysis of DG-TFET with Ferro Electric Material

Abstract

The most fundamental component of the electronics industries is a transistor which is a semiconductor device. Due to the limitation of SS at 60mv/decade of the MOSFET they were replaced with TFETs. A comprehensive analysis carried out on Double Gate Tunnel Field Effect Transistor (DGTFET) compared with a proposed device Ferro electric material based Double Gate Tunnel Field Effect Transistor (NC-DGTFET). This paper gives a comparative analysis between DGTFET and NC-DGTFET or Ferro Electric DGTFET. To get the optimum subthreshold swing of FETs, Ferro electric materials can efficiently be employed to boost the “ON current” and “Transconductance” of TFETs in the “overdrive zone”. Ferro electric materials are gaining popularity in the semiconductor industry due to their high permittivity and polarization properties.