Numerical simulations of new high-power, high-brightness diode laser structures

Abstract

The diode laser simulation is based on a Fox and Li type resonator calculation taking into account the nonlinear semiconductor medium between rear and front facette of the diode laser. The tracing of the time evolution of the optical field is replaced by an iterative approximation of the steady state of the system. The fundamental equations of the numerical model are the Helmholtz equation for the electrical field distribution and the carrier diffusion equation, coupled by the complex index of refraction and the nonlinear gain function.