Design Techniques and Considerations for a 1.2V 10bit CMOS Pipeline ADC

Jia Sun, Hao Meng, A. Paasio
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Abstract

A 1.2V 10bit 83MS/s pipeline ADC implemented in 130nm CMOS Technology is described with practical design techniques and considerations. Emphasis was placed on noise analysis and capacitance optimization, which helps to reduce both die area and power consumption. Design experiences of operational amplifier, comparator and switches were also shared. This design achieves INL and DNL of +0.65/-0.53LSB and +0.33/-0.33LSB respectively, while SNDR is 57.7dB.
1.2V 10bit CMOS流水线ADC的设计技术与考虑
介绍了一种采用130nm CMOS技术实现的1.2V 10bit 83MS/s流水线ADC的实用设计方法和注意事项。重点放在噪声分析和电容优化,这有助于减少模具面积和功耗。并分享了运算放大器、比较器和开关的设计经验。本设计实现了INL和DNL分别为+0.65/-0.53LSB和+0.33/-0.33LSB, SNDR为57.7dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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