Effect of barrier doping on photoluminescence of 1550 nm range multi quantum well heterostructures.

Abstract

This paper considers the influence of barrier doping on parameters of photoluminescence of 1550 nm range multi quantum well heterostructures grown by molecular beam epitaxy. The studied heterostructures consist of seven strained InGaAs quantum wells with delta p-doped InAlGaAs barriers. Photoluminescence studies show that p-doping increases the photoluminescence intensity of heterostructures at low pumping levels and decrease the changing of the width of photoluminescence spectra with change of pumping levels.