Carbon nanotube Schottky diodes performance study: static and high-frequency characteristics

2018 Nanotechnology for Instrumentation and Measurement (NANOfIM) Pub Date : 2018-11-01 DOI:10.1109/NANOFIM.2018.8688611

Hidelberto Macedo-Zamudio, A. Pacheco-Sánchez, E. Ramírez-García, L. Rodriguez-Mendez, D. Valdez-Pérez, M. Schröter

{"title":"Carbon nanotube Schottky diodes performance study: static and high-frequency characteristics","authors":"Hidelberto Macedo-Zamudio, A. Pacheco-Sánchez, E. Ramírez-García, L. Rodriguez-Mendez, D. Valdez-Pérez, M. Schröter","doi":"10.1109/NANOFIM.2018.8688611","DOIUrl":null,"url":null,"abstract":"A systematic study of carbon nanotube (CNT)-based Schottky diodes is performed by means of numerical device simulations and compact modeling. The static performance is discussed for CNT devices with chemical or electrostatic doping achieved by increasing the carrier concentration and by adding additional gates, respectively. The device is designed with an optimized substrate and a horse-shoe shaped coplanar access both suitable for high-frequency applications. Diode performance indicators such as rectifying factor and storage time are obtained and compared to experimental data. Based on the equivalent circuit analysis at forward bias and the Shockley diode equation, intrinsic and extrinsic cutoff frequencies for gate-less devices are obtained. Further device optimization could lead to an improved cutoff frequency as shown by assuming an improved contact transparency and multitube devices. This performance study is intended to aid the technology development of CNT-based diodes for specific applications.","PeriodicalId":169865,"journal":{"name":"2018 Nanotechnology for Instrumentation and Measurement (NANOfIM)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Nanotechnology for Instrumentation and Measurement (NANOfIM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANOFIM.2018.8688611","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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Abstract

A systematic study of carbon nanotube (CNT)-based Schottky diodes is performed by means of numerical device simulations and compact modeling. The static performance is discussed for CNT devices with chemical or electrostatic doping achieved by increasing the carrier concentration and by adding additional gates, respectively. The device is designed with an optimized substrate and a horse-shoe shaped coplanar access both suitable for high-frequency applications. Diode performance indicators such as rectifying factor and storage time are obtained and compared to experimental data. Based on the equivalent circuit analysis at forward bias and the Shockley diode equation, intrinsic and extrinsic cutoff frequencies for gate-less devices are obtained. Further device optimization could lead to an improved cutoff frequency as shown by assuming an improved contact transparency and multitube devices. This performance study is intended to aid the technology development of CNT-based diodes for specific applications.

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碳纳米管肖特基二极管性能研究:静态和高频特性

本文采用数值模拟和紧凑建模的方法对碳纳米管肖特基二极管进行了系统的研究。讨论了化学或静电掺杂碳纳米管器件的静态性能，分别通过增加载流子浓度和增加附加栅极来实现。该器件采用优化的衬底和马蹄形共面接入口设计，两者均适用于高频应用。得到了二极管的整流系数和存储时间等性能指标，并与实验数据进行了比较。基于正偏压下的等效电路分析和肖克利二极管方程，得到了无栅器件的本征截止频率和本征截止频率。进一步的器件优化可以提高截止频率，如假设接触透明度和多管器件得到改善所示。这项性能研究旨在帮助基于碳纳米管的二极管在特定应用领域的技术发展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2018 Nanotechnology for Instrumentation and Measurement (NANOfIM)

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