Y. Kuo, Hyundai Park, A. Fang, J. Bowers, R. Jones, M. Paniccia, O. Cohen
{"title":"High speed data amplification using hybrid silicon evanescent amplifier","authors":"Y. Kuo, Hyundai Park, A. Fang, J. Bowers, R. Jones, M. Paniccia, O. Cohen","doi":"10.1109/CLEO.2007.4453009","DOIUrl":null,"url":null,"abstract":"Data amplification using hybrid silicon evanescent amplifier is demonstrated at bit rates up to 40 Gbps. The amplifier exhibits 13 dB on-chip gain with low power penalty of 0.5 dB. Pattern effects due to carrier lifetime are investigated.","PeriodicalId":193475,"journal":{"name":"2007 Conference on Lasers and Electro-Optics (CLEO)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Conference on Lasers and Electro-Optics (CLEO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEO.2007.4453009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Data amplification using hybrid silicon evanescent amplifier is demonstrated at bit rates up to 40 Gbps. The amplifier exhibits 13 dB on-chip gain with low power penalty of 0.5 dB. Pattern effects due to carrier lifetime are investigated.