Methods in Characterizing the SrTiO3/GaAs Interface

Abstract

Characterizing the interface that occurs between a thin-film deposition of SrTiO 3  on a GaAs substrate is of significant interest in order to determine the electrical capabilities that may be possible with this type of system. Imaging the interface by using transmission electron microscopy as well as determining important chemical and electrical information by using Electron Energy Loss Spectroscopy (EELS) are critical in determining if the system is actually appropriate for the desired applications. In addition to these experimental calculations, however, it may be useful to determine theoretical calculations in order to confirm and interpret the results. In particular, these may be determined for EELS by using a simulation program called FEFF9, which employs use of full multiple scattering calculations in order to produce these theoretical results.