Dual Gate Junctionless Gate-All-Around (JL-GAA) FETs using Hybrid Structured Channels

Abstract

In this work, the concept of hybrid structured channel is proposed to reduce the short channel effect (SCE), while still permitting high current through the channel. 5nm Dual gate junctionless gate-all-around (JL-GAA) FET using two different hybrid structured channels (i.e. concentric cylindrical and zigzag structures) were compared. The performance characteristics of the two hybrid structures were attained and analyzed. The zigzag structured channel showed to have higher conductivity, constant Dirac point, high output conductance of ~220% more than concentric cylindrical structured channel.