A hybrid NMOS/PMOS low-dropout regulator with fast transient response for SoC applications

Abstract

In this paper, a new architecture of a fully integrated low-dropout voltage regulator (LDO) is presented. It is composed of hybrid architecture of NMOS/PMOS power transistors to relax stability requirements and enhance the transient response of the system. The LDO is designed in UMC 130 nm CMOS technology and is capable of producing a stable output voltage of 1.1 V from 1.3 V single supply with recovery settling time s 500 nsec. The LDO can supply current from 10 μA to 100 mA consuming quiescent current of 23.7 μA and 83.5 μA, respectively. The performance of the proposed technique is compared with other reported techniques and gives a better performance. It can support load capacitance from 0–50 pF with phase margin that increases from 47° at low load (10 μA) to 80° at high load (100 mA) and power supply rejection ratio (PSRR) less than −9 dB up to 1 MHz.