Power Losses Analysis of SiC MOSFETs in DC-DC Converters with High-Ripple-Current Inductors

Abstract

This paper discusses behavioral models for power losses analysis of Silicon Carbide (SiC) MOSFETs in DC-DC converters, with emphasis on the impact of inductor saturation and peak-peak ripple current. All models are implemented in PathWave ADS software, by using symbolically defined devices. A PV-MPPT DC-DC boost converter is considered as a reference case study. The results confirm the advantages of working with large peak-peak ripple and partial saturation of power inductors.