VLSI implementation of a self-checking self-exercising memory system

D. Rennels, Hyeong-Kyo Kim
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引用次数: 7

Abstract

A VLSI implementation of a design concept for a self-checking self-exercising (SCSE) memory system described by D. Rennels and S. Chau (see Proc. 16th Int. Symp. on Fault-Tolerant Computing p.358-63 (1986)) is presented. The design, which provides a way of detecting faults and correcting errors in RAMs within milliseconds while concurrently performing normal execution of programs, is reviewed. The approach is to add two parity bits to each row in the storage arrays of the RAM chips and to provide hardware scrubbing interleaved with normal program cycles. The RAM and MIBB (memory interface building block) chip designs, and some of the augmentations and changes required from the original conceptual design, are examined. The approach has been determined to be feasible, and the three-year design process has also demonstrated the large distance between a conceptual design and its realization. Errors and deficiencies were found in the original design and corrected, and new useful functions were identified and added.<>
VLSI实现了一个自检自运动记忆系统
由D. Rennels和S. Chau描述的自检自我运动(SCSE)存储系统设计概念的VLSI实现(见第16部分)。计算机协会。论容错计算p.358-63(1986))。该设计提供了一种在ram中检测故障并在几毫秒内纠正错误的方法,同时同时执行正常的程序执行。该方法是在RAM芯片的存储阵列的每行中添加两个奇偶校验位,并提供与正常程序周期交错的硬件擦洗。RAM和MIBB(内存接口构建块)芯片设计,以及从原始概念设计中需要的一些增强和更改,进行了检查。该方法已被确定为可行的,三年的设计过程也证明了概念设计与实现之间的巨大距离。在原始设计中发现错误和不足并加以纠正,并确定和添加了新的有用功能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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