{"title":"A low phase noise wide-tuning range class-F VCO based on a dual-mode resonator in 65nm CMOS","authors":"Naushad Dhamani, Paria Sepidband, K. Entesari","doi":"10.1109/RWS.2018.8305009","DOIUrl":null,"url":null,"abstract":"This paper presents a low phase noise wide tuning range Class-F voltage controlled oscillator using a dual-mode resonator. In comparison to other conventional wideband oscillators the proposed capacitively/inductively-coupled resonator will integrate the benefits of Class-F voltage control oscillators and dual-mode switching networks to obtain simultaneous low phase noise and wide-tuning range. The proposed structure prototyped in a 65nm TSMC CMOS technology, shows a 2.14–4.22GHz continuous tuning range, phase noise figure-of-merit (FoM) of 192.7dB at 2.3GHz and better than 188dB across the entire operating frequency range. The oscillator consumes 15–16.4mW from a 0.6V supply and occupies an active area of 0.7mm2.","PeriodicalId":170594,"journal":{"name":"2018 IEEE Radio and Wireless Symposium (RWS)","volume":"8 5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Radio and Wireless Symposium (RWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RWS.2018.8305009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents a low phase noise wide tuning range Class-F voltage controlled oscillator using a dual-mode resonator. In comparison to other conventional wideband oscillators the proposed capacitively/inductively-coupled resonator will integrate the benefits of Class-F voltage control oscillators and dual-mode switching networks to obtain simultaneous low phase noise and wide-tuning range. The proposed structure prototyped in a 65nm TSMC CMOS technology, shows a 2.14–4.22GHz continuous tuning range, phase noise figure-of-merit (FoM) of 192.7dB at 2.3GHz and better than 188dB across the entire operating frequency range. The oscillator consumes 15–16.4mW from a 0.6V supply and occupies an active area of 0.7mm2.