Nonvolatile Memory TFT Using Neutral Particle Beam at Room Temperature to Generate Mobile Protons Moving in the Gate Insulator

Abstract

We have verified that nano-cystalline silicon(nc-Si) and InGaZnO(IGZO) based Non Volatile Memory Thin Film Transistor(NVM-TFT) can be fabricated by effectively generating protons at room temperature(RT) in gate insulator(SiO2) with our developed Neutral Beam Assist System(NBAS). We also confirmed that the amount of protons can be controlled by measuring the memory window of the memory device. The device will be on display for next-generation wearable device displays. It will be applied to capacitor free OLED pixel circuit design, which will give many advantages such as low power, higher aperture ratio, and circuit simplification.