{"title":"Silica based PON-AWG with 2/spl times/8 up- and downstream channels","authors":"B. Kuhlow, G. Przyrembel","doi":"10.1109/OFC.2002.1036655","DOIUrl":null,"url":null,"abstract":"We have proposed and demonstrated a 3-band passive optical network arrayed waveguide gratings (PON-AWG) providing 2/spl times/8 WDM channels for down- (around 1534 nm) and upstreaming (around 1557 nm) signals from the central office to the users, and vice-versa. The downstream ports are overlayed by a distributed broadcast signal at 1500 nm. All the needed optical functions (DEMUX-, MUX, imaging) are implemented in one AWG structure designed to accommodate the three specific bands. First devices fabricated in silica-on-silicon technique show a center insertion loss of 2.5 dB and a crosstalk of <-30 dB for the signals of the downstreaming paths. The 1 to 8 distribution system at 1500 nm shows an excess loss of -5.5 dB and a uniformity of +/-1.3 dB.","PeriodicalId":347952,"journal":{"name":"Optical Fiber Communication Conference and Exhibit","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Fiber Communication Conference and Exhibit","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OFC.2002.1036655","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We have proposed and demonstrated a 3-band passive optical network arrayed waveguide gratings (PON-AWG) providing 2/spl times/8 WDM channels for down- (around 1534 nm) and upstreaming (around 1557 nm) signals from the central office to the users, and vice-versa. The downstream ports are overlayed by a distributed broadcast signal at 1500 nm. All the needed optical functions (DEMUX-, MUX, imaging) are implemented in one AWG structure designed to accommodate the three specific bands. First devices fabricated in silica-on-silicon technique show a center insertion loss of 2.5 dB and a crosstalk of <-30 dB for the signals of the downstreaming paths. The 1 to 8 distribution system at 1500 nm shows an excess loss of -5.5 dB and a uniformity of +/-1.3 dB.