Biodegradable zinc oxide thin film transistors

J. Kettle, D. Kumar
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Abstract

In this work, biodegradable thin film transistors (TFTs) based on Zinc Oxide (ZnO) active layers are reported. To manufacture high performing devices, a planarization layer was applied onto the biodegradable substrate which led to a substantial decrease in the surface roughness and ensured that the substrate were smooth enough for device fabrication. ZnO TFTs were fabricated onto the planarized surface, tested and data supplied from the transfer curves showed a mobility of 2.9 cm2/s, an on/off ratio of 8 × 106 and a threshold voltage of 2.5 V. Methods to further improve device performance and future applications are discussed.
可生物降解的氧化锌薄膜晶体管
本文报道了一种基于氧化锌(ZnO)活性层的可生物降解薄膜晶体管(TFTs)。为了制造高性能器件,在可生物降解基板上应用了一层平面化层,这导致表面粗糙度大幅降低,并确保基板足够光滑以用于器件制造。将ZnO tft制备在平面表面上,测试和传递曲线提供的数据表明迁移率为2.9 cm2/s,开/关比为8 × 106,阈值电压为2.5 V。讨论了进一步提高器件性能和未来应用的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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