Fabrication and optimization of T -gate for high performance HEMT and MMIC devices

Abstract

The design of T -Gate is crucial for the performance of AlGaN/GaN power amplifiers. Optimizing aT-gate reproducibly is a challenge on Gallium Nitride (GaN) on Silicon Carbide (SiC) due to the charging of the substrate. Single-step electron-beam lithography (EBL) has been demonstrated by engineering by dose and photoresist parameters.