Q-factor of microstrip resonators with high dielectric substrates

2010 20th International Crimean Conference "Microwave & Telecommunication Technology" Pub Date : 2010-11-11 DOI:10.1109/CRMICO.2010.5632662

A. Zakharov, M. Ilchenko, V. Karnauh, L. Pinchuk

引用次数: 0

Abstract

The experimental researches of microstrip resonators on the substrates with inductivity ε_r = 80; 38 have been carried out (thickness of the substrate is 1 mm).

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高介电衬底微带谐振器的q因子

电感率εr = 80基片上微带谐振腔的实验研究已经进行了38次(衬底厚度为1mm)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2010 20th International Crimean Conference "Microwave & Telecommunication Technology"

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