Wideband high efficiency envelope tracking integrated circuit for micro-base station power amplifiers

2011 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2011-06-05 DOI:10.1109/RFIC.2011.5940621

M. Kwak, D. Kimball, C. Presti, A. Scuderi, C. Santagati, Jonmei J. Yan, P. Asbeck, L. Larson

引用次数: 7

Abstract

This paper presents a high performance BCD (Bipolar-CMOS-DMOS) monolithic envelope tracking IC to achieve high efficiency and linearity for micro-base station power amplifier applications. Measurement of the BCD high voltage (Vdd = 15 V) envelope amplifier shows an efficiency of 72% using WCDMA input signals (7.7 dB PAR). An envelope tracking power amplifier including a GaN FET RF stage has overall drain efficiency (DE) above 51%, with a normalized power RMS error below 1.2% and ACLR1 of −49 dBc using memory mitigation digital pre-distortion (DPD), at an average WCDMA output power above 2 W and a gain of 10 dB.

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用于微型基站功率放大器的宽带高效包络跟踪集成电路

本文提出了一种高性能BCD(双极cmos - dmos)单片包络跟踪集成电路，用于微基站功率放大器，实现了高效率和线性度。BCD高压(Vdd = 15 V)包络放大器的测量表明，使用WCDMA输入信号(7.7 dB PAR)，效率为72%。在WCDMA平均输出功率大于2w，增益为10db的情况下，包含GaN场效应管射频级的包线跟踪功率放大器总体漏极效率(DE)高于51%，采用内存缓解数字预失真(DPD)，归一化功率均方根误差低于1.2%，ACLR1为- 49 dBc。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2011 IEEE Radio Frequency Integrated Circuits Symposium

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