{"title":"Status and trends in power semiconductor devices","authors":"D. Blackburn","doi":"10.1109/IECON.1993.339117","DOIUrl":null,"url":null,"abstract":"A brief description of some developments that affect the application of power semiconductor devices is given. Developments in 'chips', packages, simulation, and new materials are included.<<ETX>>","PeriodicalId":132101,"journal":{"name":"Proceedings of IECON '93 - 19th Annual Conference of IEEE Industrial Electronics","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IECON '93 - 19th Annual Conference of IEEE Industrial Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IECON.1993.339117","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A brief description of some developments that affect the application of power semiconductor devices is given. Developments in 'chips', packages, simulation, and new materials are included.<>