Different electrode anodes used in OLED devices Diferentes eletrodos anodos usados em dispositivos OLEDs

E. R. Santos, T. Fullenbach, M. Medeiros, L. Zambom, R. Onmori, Shu Hui Wang
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Abstract

Transparent conductive oxides (TCOs) known as indium tin oxide (ITO) and fluorine tin oxide (FTO) deposited on glass were compared by different techniques and also as anodes in organic light-emitting diode (OLED) devices with same structure. ITO produced at laboratory was compared with the commercial one manufactured by different companies: Diamond Coatings, Displaytech and Sigma-Aldrich, and FTO produced at laboratory was compared with the commercial one manufactured by Flexitec Company. FTO thin films produced at laboratory presented the lowest performance measured by Hall effect technique and also by I-V curve of OLED device with low electrical current and high threshold voltage. ITO thin films produced at laboratory presented elevated sheet resistance in comparison with commercial ITOs (approximately one order of magnitude greater), that can be related by a high number of defects as discontinuity of the chemical lattice or low crystalline structure. In the assembly of OLED devices with ITO and FTO produced at laboratory, neither presented luminances. ITO manufactured by Sigma-Aldrich company presented better electrical and optical characteristics, as low electrical resistivity, good wettability, favorable transmittance, perfect physicalchemical stability and lowest threshold voltage (from 3 to 4.5 V) for OLED devices.
OLED设备中使用的不同电极阳极OLED设备中使用的不同电极阳极
采用不同的工艺,比较了氧化铟锡(ITO)和氧化氟锡(FTO)在玻璃上沉积的透明导电氧化物(tco),并将其作为阳极应用于具有相同结构的有机发光二极管(OLED)器件中。将实验室生产的ITO与不同公司(Diamond Coatings、Displaytech和Sigma-Aldrich)生产的商业化ITO进行比较,并将实验室生产的FTO与Flexitec公司生产的商业化FTO进行比较。实验室生产的FTO薄膜在低电流和高阈值电压下,霍尔效应技术和OLED器件的I-V曲线测量的性能最低。与商业ITO相比,实验室生产的ITO薄膜表现出更高的薄片电阻(大约大一个数量级),这可能与化学晶格不连续或低晶体结构的大量缺陷有关。在用实验室生产的ITO和FTO组装OLED器件时,两者都没有呈现亮度。Sigma-Aldrich公司制造的ITO具有较好的电学和光学特性,具有低电阻率,良好的润湿性,良好的透射率,完善的物理化学稳定性和OLED器件最低的阈值电压(3至4.5 V)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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