Multi Gigabit Transceiver Configuration RAM Fault Injection Response

Paul L. Murray, Doug Walquist
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引用次数: 2

Abstract

High performance processing and memory systems require enormous amounts of I/O bandwidth. Wide parallel bus architectures have reached their practical limits for high bandwidth transport. High speed serial interfaces that support 10's of Gbps are now displacing wide shared bus architectures for many systems. Xilinx FPGAs serial links support this transition by providing more than 10 Gbps in their multi gigabit transceiver (MGT) I/Os. For space applications, these links are susceptible to single event effects (SEE). Many of these effects are due to upsets in the FPGAs configuration RAM that control the many features and functions of the I/O. This paper details the functional effects of configuration RAM upsets in Xilinx MGTs. These effects are realized by injecting upsets in the FPGA configuration RAM while monitoring MGT functional operation. Configuration RAM upset effects are described and functional upset rates due to configuration RAM upsets are calculated for an example orbit. The results of this work provide insight into the on-orbit upset rate and effects of Xilinx multigigabit transceivers
多千兆收发器配置RAM故障注入响应
高性能处理和内存系统需要大量的I/O带宽。宽并行总线体系结构已经达到了高带宽传输的实际极限。支持10gbps的高速串行接口正在取代许多系统的宽共享总线架构。赛灵思fpga串行链路通过提供超过10 Gbps的多千兆收发器(MGT) I/ o来支持这种转换。对于空间应用,这些链接容易受到单事件影响(SEE)。这些影响中的许多是由于fpga配置RAM中的干扰造成的,这些RAM控制着I/O的许多特性和功能。本文详细介绍了Xilinx mgt中配置RAM干扰的功能影响。这些效果是通过在FPGA配置RAM中注入干扰来实现的,同时监控MGT功能操作。描述了组态RAM扰动效应,并计算了实例轨道组态RAM扰动引起的功能扰动率。这项工作的结果提供了对赛灵思多千兆收发器在轨干扰率和影响的深入了解
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