Broad-band electromagnetic radiation damage in GaAs MESFETs

Abstract

A failure mechanism was observed for SiN/sub 2/-passivated metal-semiconductor field-effect-transistor (MESFET) devices exposed to fast-risetime DC video pulses. The intensity of the pulses was about 33% of the value required to cause single-pulse failure. The failure mechanism, which degrades performance by surface flashover and erosion of the passivation layer, eventually leads to sputtering of the gate-source metallization. The results were observed by using a combination of optical, electron, and X-ray micrographs, plus MESFET terminal parameters.<>