A Grounded Co-Planar Waveguide MEMS Switch

K. Miyaguchi, Y. Yoshida, T. Nishino, M. Hangai, Y. Suehiro, Sang-Seok Lee, A. Iida, O. Ishida
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引用次数: 6

Abstract

A grounded co-planar waveguide (GCPW) MEMS switch is presented. The proposed switch has a movable SiN membrane with a signal line and ground lines above a dielectric-air-metal (DAM) cavity on which a ground metal is patterned, resulting in a structure of GCPW transmission line. The electrostatic force makes an RF short path to the ground metal on the bottom of the DAM cavity with metal-to-metal contact. The ground metal which covers silicon substrate makes the switch to be on a low-resistivity silicon substrate. The measured results of the switch validate the proposed structure of the switches utilizing the DAM cavity.
一种接地共面波导MEMS开关
提出了一种接地共面波导(GCPW) MEMS开关。所提出的开关具有可移动的SiN膜,其上有信号线和接地线,其上有接地金属的介质-空气-金属(DAM)腔,从而形成GCPW传输线的结构。静电力通过金属对金属的接触使RF短路径到达DAM腔底部的接地金属。覆盖硅衬底的接地金属使开关位于低电阻硅衬底上。该开关的测量结果验证了所提出的利用DAM腔的开关结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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