Power electronics modules for inverter applications using flip-chip on flex-circuit technology

H. Shah, Y. Xiao, T. P. Chow, R. Gutmann, E. R. Olson, S. Park, W. Lee, J. Connors, T. Jahns, R. Lorenz
{"title":"Power electronics modules for inverter applications using flip-chip on flex-circuit technology","authors":"H. Shah, Y. Xiao, T. P. Chow, R. Gutmann, E. R. Olson, S. Park, W. Lee, J. Connors, T. Jahns, R. Lorenz","doi":"10.1109/IAS.2004.1348673","DOIUrl":null,"url":null,"abstract":"A power packaging platform that features flex-circuit interconnection of power dies and flip-chip soldering technology has incorporated several advanced features including active gate drive technology with adjustable dv/dt control, a self-boost charge pump for the high-side gate drive power supply, and isolated giant magnetoresistive (GMR) devices for current sensing and active Tj and /spl Delta/Tj. control. The packaging platform, previously demonstrated suitably for 42 V/16 A automotive applications, has been extended to 400 V/10 A inverter applications. Experimental test results demonstrate electrical performance measured under both double-pulse and 10% duty-ratio conditions. A comparison of the switching characteristics of IGBT test modules implemented with both Si and SiC free-wheeling diodes demonstrates the performance advantages that are possible with SiC power devices.","PeriodicalId":131410,"journal":{"name":"Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting.","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IAS.2004.1348673","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

Abstract

A power packaging platform that features flex-circuit interconnection of power dies and flip-chip soldering technology has incorporated several advanced features including active gate drive technology with adjustable dv/dt control, a self-boost charge pump for the high-side gate drive power supply, and isolated giant magnetoresistive (GMR) devices for current sensing and active Tj and /spl Delta/Tj. control. The packaging platform, previously demonstrated suitably for 42 V/16 A automotive applications, has been extended to 400 V/10 A inverter applications. Experimental test results demonstrate electrical performance measured under both double-pulse and 10% duty-ratio conditions. A comparison of the switching characteristics of IGBT test modules implemented with both Si and SiC free-wheeling diodes demonstrates the performance advantages that are possible with SiC power devices.
电力电子模块的逆变器应用使用倒装芯片上的柔性电路技术
一个功率封装平台,具有电源芯片的柔性电路互连和倒装焊接技术,结合了几个先进的功能,包括具有可调dv/dt控制的有源栅极驱动技术,用于高侧栅极驱动电源的自升压电荷泵,以及用于电流传感和有源Tj和/spl Delta/Tj的隔离巨磁阻(GMR)器件。控制。封装平台,以前演示适用于42 V/16 A汽车应用,已扩展到400 V/10 A逆变器应用。实验测试结果证明了双脉冲和10%占空比条件下的电性能。通过比较使用硅和SiC自由旋转二极管实现的IGBT测试模块的开关特性,可以看出SiC功率器件可能具有的性能优势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信